NXP's plastic packaging technology helps extract moreperformance from RF transistors, while simplifying amplifier manufacturabilitythanks to tighter dimensional tolerances and better solder connections. "The MRF1K50Hadds reliability to industrial systems that require operation in the harshestenvironments."Įvengreater reliability can be achieved with the over-molded plastic version of thetransistor, the MRF1K50N, which reduces the thermal resistance by 30 percentcompared to the MRF1K50H. "This newtransistor provides RF designers with the highest output power and highestenergy absorption in the market while dropping into existing PCBs," said PierrePiel senior director for RF power industrial technologies at NXP. TheMRF1K50H is housed in a standard air cavity ceramic package, and is impedancecompatible with existing high-power transistors on the market today: it cansimply be dropped into existing systems, without the need to redesign the printed-circuitboard (PCB), requiring only light retuning. This level of ruggedness increases reliability, which makes thetransistor an excellent alternative to vacuum tubes. Like allrugged LDMOS transistors, the MRF1K50H is expected to survive a VSWR of 65:1but can absorb 50 percent more energy than its predecessor, the 1.25-kWMRFE6VP61K25H.
#High power transistor tv#
The MRF1K50H operates upto 500 MHz for a broad range of applications from laser and plasma sources toparticle accelerators, industrial welding machines, radio and VHF TV broadcasttransmitters, and amateur radio linear amplifiers. Designed to deliver 1.50 kW CW at 50V,the MRF1K50H can reduce the number of transistors in high-power RF amplifiers,which decreases amplifier size and bill of materials. NXPSemiconductors today introduced the most powerful RF transistor in anytechnology operating at any frequency. This program supports customer design investments by ensuring that selected devices are available during a minimum of 10 or 7 years from the notification date.Ĭheck-out the list of our certified STPOWER transistors and modules here.Combines industry's highestRF output power with superior ruggedness and thermal performance STPOWER SiC MOSFETs are also included in the program, with a minimum longevity commitment of 7 years. ST has certified several ST POWER high-voltage MOSFETs, IGBTs and Intelligent Power Modules (IPMs) for 10-year longevity. ST’s 10-year longevity commitment program ensures stable and continuous supply for customers discrete and module) and protections for high reliability and safety helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime. Our wide ST POWER product portfolio combined with state-of-the art packaging (i.e. Due to the improved thermal design of ST's power electronics systems, our silicon-carbide (SiC) MOSFETs ensure good robustness thanks to the industry’s highest temperature rating of 200 ☌ and voltage ranging from 650 to 2200 V. As well as, our Gallium Nitride on silicon substrate (GaN/Si) transistors allow highest efficiency and highest power density thanks to outstanding specific dynamic on-state resistance and small capacitances ranging to 100, 650 and 900 V. ST offers a wide portfolio of power MOSFETs ranging from -100 to 1700 V, IGBTs with breakdown voltages ranging from 300 to 1700 V and power bipolar transistors ranging from 15 to 1700 V.
#High power transistor full#
Leading-edge power technologies for both high-and low-voltage applications combined with a full package range and innovative die bonding technologies exemplify ST’s innovation in power transistors belonging to the ST POWER family.
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